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2SD1816L-Q-TM3-E-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças 2SD1816L-Q-TM3-E-R
Descrição Electrónicos  HIGH CURRENT SWITCHIG APPLICATIONS
PDF  4 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD1816L-Q-TM3-E-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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2SD1816
NPN EPITAXIAL PLANAR TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R209-011,B
ABSOLUTE MAXIMUM RATINGS (Ta =25℃ )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6
V
DC
4
A
Collector Current
PULSE(Note 1)
IC
8
A
1
W
Collector Power Dissipation
PD
(TC=25°C) 20 (Note 2)
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note1: Duty=1/2, Pw=20ms
Note2: When mounted on a 40×40×0.7mm ceramic board
Note3: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector Base Breakdown Voltage
BVCBO
IC =10µA, IE =0
120
V
Collector Emitter Breakdown Voltage
BVCEO
IC =1mA, RB=∞
100
V
Emitter Base Breakdown Voltage
BVEBO
IE =10µA, IC=0
6
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC = 2A, IB =0.2A
0.9
1.2
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC = 2A, IB=0.2A
150
400
mV
Collector Cut-Off Current
ICBO
VCB = 100 V, IE =0
1
µA
Emitter Cut-Off Current
IEBO
VEB = 4V, IC=0
1
µA
hFE1
VCE = 5V, IC = 0.5A
70
400
DC Current Transfer Ratio
hFE2
VCE =5V, IC = 3A
40
Transition Frequency
fT
VCE =10V, IC =0.5A
180
MHz
Output Capacitance
Cob
VCB =10V, IE =0A, f =1MHz
40
pF
Turn-on Time
tON
See test circuit
100
ns
Storage Time
tSTG
See test circuit
900
ns
Fall Time
tF
See test circuit
50
ns
CLASSIFICATION of hFE1
RANK
R
S
T
Q
RANGE
100 - 200
140 - 280
200 - 400
70 -140
TEST CIRCUIT
INPUT
OUTPUT
IB1
I B2
50V
50
-5V
100µ
+
470µ
+
VR
RB
PW=20μS
Duty Cycle≒1%
Ic=10, IB1= -10, IB2=2A
Unit (resistance:Ω, capacitance: F)



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