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MMBT1015-GR-AE3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças MMBT1015-GR-AE3-R
Descrição Electrónicos  LOW FREQUENCY PNP AMPLIFIER TRANSISTOR
PDF  4 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMBT1015-GR-AE3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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MMBT1015
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-015,E
ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
SOT-23
250
mW
Collector Dissipation
SOT-523/SOT-113/SOT-323
PC
200
mW
Collector Current
IC
-150
mA
Base Current
IB
-50
mA
Junction Temperature
TJ
125
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic = -100
µA, I
E = 0
-50
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic = -10mA, IB = 0
-50
V
Emitter-Base Breakdown Voltage
BVEBO
IE = -10µA, Ic = 0
-5
V
Collector-Emitter Saturation Voltage
VCE(SAT) Ic = -100mA, IB = -10mA
-0.1
-0.3
V
Base-Emitter Saturation Voltage
VBE(SAT) Ic = -100mA, IB = -10mA
-1.1
V
Collector Cut-off Current
ICBO
VCB = -50V, IE = 0
-100
nA
Emitter Cut-off Current
IEBO
VEB = -5V, Ic = 0
-100
nA
hFE1
VCE = -6V, Ic = -2mA
120
700
DC Current Gain
hFE2
VCE = -6V, Ic = -150mA
25
Transition Frequency
fT
VCE = -10V, Ic = -1mA
80
MHz
Output Capacitance
COB
VCB = -10V, IE = 0, f = 1MHz
4.0
7.0
pF
Noise Figure
NF
Ic = -0.1mA, VCE = -6V
RG= 1kΩ, f = 100Hz
0.5
6
dB
CLASSIFICATION OF hFE1
RANK
Y
GR
BL
RANGE
120-240
200-400
350-700



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