DTA143T-AL3-R datasheet(2/3 Pages) UTC

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DTA143T

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-058,D

ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

Collector Current

-100

SOT-523

150

Collector Power Dissipation

SOT-23/SOT-323

200

Junction Temperature

+150

℃

Storage Temperature

TSTG

-55~+150

℃

Note

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-base breakdown voltage

BVCBO

IC=-50μA

-50

Collector-emitter breakdown voltage

BVCEO

IC=-1mA

-50

Emitter-base breakdown voltage

BVEBO

IE=-50μA

-5

Collector cutoff current

ICBO

VCB=-50V

-0.5

μA

Emitter cutoff current

IEBO

VEB=-4V

-0.5

μA

Collector-emitter saturation voltage

VCE(SAT) IC=-5mA, IB= -0.25mA

-0.3

DC Current Gain

hFE

VCE=-5V, IC= -1mA

100

250

600

Input resistance

3.29

4.7

6.11

kΩ

Transition frequency

VCE=-10V, IE=5mA, f=100MHz *

250

MHz

* Transition frequency of the device

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