UG4J

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R222-001,A

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

100

mA

Total Power Dissipation

150(Note1)

mW

Junction Temperature

+150

℃

Storage Temperature

-40 ~ +150

℃

Note 1. *120mW per element must not be exceeded.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

50

V

Collector-Emitter Breakdown Voltage

50

V

Emitter-Base Breakdown Voltage

5

V

Current Cutoff Current

0.5

µA

Emitter Cutoff Current

0.5

µA

Collector-Emitter Saturation Voltage

0.3

V

DC Current Transfer Ratio

100

250 600

Transition Frequency

250

MHz

Input Resistance

7

10

13

KΩ

Note * Transition frequency of the device.

EQUIVALENT CIRCUIT

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.