MMBTA44-AE3-R datasheet(2/5 Pages) UTC

2 / 5 page

MMBTA44/45

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

www.unisonic.com.tw

QW-R206-007.B

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

MMBTA44

500

Collector-Base Voltage

MMBTA45

VCBO

400

MMBTA44

400

Collector-Emitter Voltage

MMBTA45

VCEO

350

Emitter-Base Voltage

VEBO

Collector Current

300

Ta=25

°C

350

Power Dissipation

Tc=25

°C

1.5

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

ELECTRICAL CHARACTERISTICS (T

j =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

MMBTA44

500

Collector-Base Breakdown

Voltage

MMBTA45

BVCBO

Ic=100

µA, I

B=0

400

MMBTA44

400

Collector-Emitter Breakdown

Voltage

MMBTA45

BVCEO

Ic=1mA, IB=0

350

Emitter-Base Breakdown Voltage

BVEBO

IE=100µA, Ic=0

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=1mA, IB=0.1mA

Ic=10mA, IB=1mA

Ic=50mA, IB=5mA

0.4

0.5

0.75

Base-Emitter Saturation Voltage

VBE(sat)

Ic=10mA, IB=1mA

0.75

MMBTA44

VCB=400V, IE =0

0.1

Collector Cut-off Current

MMBTA45

ICBO

VCB=320V, IE =0

0.1

µA

MMBTA44

VCE =400V, IB=0

0.5

Collector Cut-off Current

MMBTA45

ICES

VCE =320V, IB=0

0.5

µA

Emitter Cut-off Current

IEBO

VEB=4V, Ic=0

0.1

µA

DC Current Gain(Note)

hFE

VCE =10V, Ic=1mA

VCE =10V, Ic=10mA

VCE =10V, Ic=50mA

VCE =10V, Ic=100mA

240

Current Gain Bandwidth Product

VCE =20V, Ic=10mA

f=100MHz

MHz

Output Capacitance

Cob

VCB=20V, IE =0, f=1MHz

Note: Pulse test: PW<300µs, Duty Cycle<2%

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