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ZXT849K Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças ZXT849K
Descrição Electrónicos  isc Silicon NPN Power Transistor
PDF  3 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ZXT849K Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

  ZXT849K Datasheet HTML 1Page - Inchange Semiconductor Company Limited ZXT849K Datasheet HTML 2Page - Inchange Semiconductor Company Limited ZXT849K Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc Silicon NPN Power Transistor
ZXT849K
www.iscsemi.com
2023-8-18
2
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
7
--
--
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=10mA; IB= 0
30
--
--
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
80
--
--
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 20mA
--
--
40
mV
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB=20mA
--
--
80
mV
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB=20mA
--
--
180
mV
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 7A; IB=350mA
--
--
240
mV
VBE(sat)
Base -Emitter Saturation Voltage
IC= 7A; IB=350mA
--
--
1.15
mV
VBE(on)
Base-Emitter on Voltage
IC=7A; VCE=1V
--
--
1.1
mV
hFE
DC Current Gain
IC= 10mA; VCE= 1V
100
--
--
hFE
DC Current Gain
IC= 1A; VCE= 1V
100
--
300
hFE
DC Current Gain
IC= 7A; VCE= 1V
100
--
--
hFE
DC Current Gain
IC= 20A; VCE= 2V
40
--
--



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