TO-247

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TO-3P

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TO-247 long leads

TAB

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Features

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Maximum junction temperature: TJ = 175 °C

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High speed switching series

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Minimized tail current

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Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A

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Tight parameter distribution

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Safe paralleling

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Positive VCE(sat) temperature coefficient

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Low thermal resistance

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Very fast soft recovery antiparallel diode

Applications

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Photovoltaic inverters

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High-frequency converters

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-

stop structure. These devices are part of the new HB series of IGBTs, which

represent an optimum compromise between conduction and switching loss to

maximize the efficiency of any frequency converter. Furthermore, the slightly positive

VCE(sat) temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Product status link

STGW60H65DFB

STGWT60H65DFB

STGWA60H65DFB

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

STGW60H65DFB, STGWA60H65DFB,

STGWT60H65DFB

Datasheet

DS9535 - Rev 8 - July 2019

For further information contact your local STMicroelectronics sales office.

www.st.com