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STC08DE150HV Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STC08DE150HV
Descrição Electrónicos  Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm
PDF  11 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STC08DE150HV Folha de dados(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STC08DE150HV
4/11
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ICS(SS)
Collector-source
current (VBS =VGS =0V)
VCS(SS) =1500V
100
µA
IBS(OS)
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
10
µA
ISB(OS)
Source-base current
(IC =0, VGS =0V)
VSB(OS) =9V
100
µA
IGS(OS)
Gate-source leakage
(VBS =0V)
VGS = ± 20V
500
nA
VCS(ON)
Collector-source ON
voltage
VGS =10V IC =8A IB =1.6A
VGS =10V IC =5A IB =0.5A
0.6
0.6
1.4
V
V
hFE
DC current gain
IC =8A VCS =1V VGS =10V
IC =5A VCS =1V VGS =10V
4.5
8
7.5
10
VBS(ON)
Base-source ON
voltage
VGS =10V IC =8A IB =1.6A
VGS =10V IC =5A IB =0.5A
1.5
1
2V
V
VGS(th)
Gate threshold voltage
VBS =VGS IB =250µA
1.5
2.2
3
V
Ciss
Input capacitance
VCS =25V f =1MHz
VGS=VCB=0V
750
pF
QGS(tot)
Gate-source Charge
VGS =10V
IC =8A
VCS =25V
VCB=0V
12.5
nC
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =1200V tp =4µs
IC =5A
IB =0.5A
526
8.5
ns
ns
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =1200V tp =4µs
IC =5A
IB =1A
884
16
ns
ns
VCSW
Maximum collector-
source voltage
switched without
snubber
RG =47Ω
hFE =5
IC = 8A
1500
V



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