2STF2220 datasheet(4/11 Pages) STMICROELECTRONICS

Nome de Peças	2STF2220

Descrição Electrónicos	High Gain Low Voltage PNP Power Transistor

PDF	11 Pages

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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Electrical characteristics

2STF2220

4/11

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (2) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -20V

-0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = -5V

-0.1

µA

V(BR)CEO (2)

Collector-emitter

breakdown voltage

(IB = 0)

IC = -10mA

-20

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = -100µA

-5

VCE(sat) (2) Collector-emitter

saturation voltage

IC = -0.5A

IB = -50mA

IC = -1.5A

IB = -150mA

-0.25

-0.45

VBE(sat) (2)

Base-emitter saturation

voltage

IC = -0.5A

IB = -50mA

IC = -1.5A

IB = -150mA

-1

-1.1

VBE(on) (2) Base-emitter on voltage

IC = -1A

VCE = -2V

-1

hFE (2)

DC current gain

IC = -100mA

VCE = -2V

IC = -500mA

VCE = -2V

IC = -1.5A

VCE = -2V

IC = -3A

VCE = -2V

200

170

120

600

CCBO

Collector-base

capacitance

IE = 0

VCB = -10V

f = 1MHz

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = -1.5A

VCC = -10V

IB1 = -IB2 = -150mA

250

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