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ISCF8001 Folha de dados(PDF) 3 Page - Inchange Semiconductor Company Limited |
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ISCF8001 Folha de dados(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 5 page ![]() ISCF8001 SiC N-Channel MOSFET www.iscsemi.com 2023-8-18 3 SOURCE-DRAIN BODY DIODE CHARACTERISTICS Drain - Source Body Diode Characteristics VSD Diode Forward Voltage ISD= 1A; VGS= 0V;TJ=25°C -- 3.5 -- V ISD= 1A; VGS= 0V;TJ=150°C -- 3.4 -- trr Reverse Recovery Time VGS=-5V,ISD=2A dI/dt=1200A/us, Vds=1200V -- 23 -- ns Qrr Reverse Recovery Charge -- 31 -- uC CUICUIT DIAGRAM |
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