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NX5008NBKH Folha de dados(PDF) 7 Page - Nexperia B.V. All rights reserved |
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NX5008NBKH Folha de dados(HTML) 7 Page - Nexperia B.V. All rights reserved |
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7 / 14 page ![]() Nexperia NX5008NBKH 50 V, N-channel Trench MOSFET VDS (V) 0 5 4 2 3 1 aaa-032049 0.4 0.6 0.2 0.8 1.0 ID (A) 0 2.5 V 4.5 V VGS = 1.2 V 1.4 V 1.6 V 1.8 V Tj = 25 °C Fig. 7. Output characteristics: drain current as a function of drain-source voltage; typical values aaa-032050 VGS (V) 0 1.5 1.0 0.5 10-4 10-5 10-3 ID (A) 10-6 min max typ Tj = 25 °C; VDS = 5 V Fig. 8. Sub-threshold drain current as a function of gate-source voltage ID (A) 0 1.0 0.8 0.4 0.6 0.2 aaa-032051 4 6 2 8 10 RDSon 0 2.5 V 1.8 V VGS = 4.5 V 1.6 V 1.2 V 1.4 V Tj = 25 °C Fig. 9. Drain-source on-state resistance as a function of drain current; typical values VGS (V) 0 5 4 2 3 1 aaa-032052 4 6 2 8 10 RDSon 0 Tj = 25 °C Tj = 150 °C ID = 0.4 A Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values NX5008NBKH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2023. All rights reserved Product data sheet 6 February 2023 7 / 14 |
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