GaAs SPDT 2.8 V High Power Switch

DC - 3.0 GHz

MASWSS0029

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product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

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whatsoever arising out of the use or application of any product(s) or

information.

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V2

2

4

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

5

dB

dB

dB

—

—

—

0.40

0.50

0.60

0.65

—

—

Isolation

dB

dB

dB

23

—

—

24.5

18.5

13

—

—

—

Return Loss

dB

dB

—

—

20

16

—

—

IP3

Two Tone, +29 dBm Total Pin, 1 MHz Spacing

dBm

—

60

—

P0.1dB

dBm

—

34

—

Trise, Tfall

10% to 90% RF, 90% to 10% RF

nS

—

200

—

Ton, Toff

50% control to 90% RF,

and 50% control to 10% RF

nS

—

250

—

Transients

In Band

mV

—

14

—

Gate Leakage

uA

—

—

60

Frequency

DC – 1 GHz

1 – 2 GHz

2 - 3 GHz

DC – 1 GHz

1 – 2 GHz

2 - 3 GHz

DC – 2 GHz

2 - 3 GHz

0.05 - 3 GHz

—

—

—

—

—

4. External DC blocking capacitors are required on all RF ports.

5. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 - 500 MHz, 39 pF for 0.5 - 3.0 GHz.

V1

V2

ANT– RF1

ANT - RF2

+2.8 V

0 V

On

Off

0 V

+2.8 V

Off

On

Truth Table

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

†

Meets JEDEC moisture sensitivity level 1 requirements