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BU2507AF Folha de dados(PDF) 3 Page - NXP Semiconductors

Nome de Peças BU2507AF
Descrição Electrónicos  Silicon Diffused Power Transistor
PDF  6 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2507AF Folha de dados(HTML) 3 Page - NXP Semiconductors

  BU2507AF Datasheet HTML 1Page - NXP Semiconductors BU2507AF Datasheet HTML 2Page - NXP Semiconductors BU2507AF Datasheet HTML 3Page - NXP Semiconductors BU2507AF Datasheet HTML 4Page - NXP Semiconductors BU2507AF Datasheet HTML 5Page - NXP Semiconductors BU2507AF Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AF
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit.
Fig.4. High and low DC current gain. h
FE = f (IC)
V
CE = 1 V
Fig.5. High and low DC current gain. h
FE = f (IC)
V
CE = 5 V
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
0.01
0.1
1
10
100
1
10
100
IC / A
hFE
VCE = 1 V
Ths = 25 C
Ths = 85 C
BU2507AF/X
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU2507AF/X
0.01
0.1
1
10
100
1
10
100
IC / A
hFE
VCE = 5 V
Ths = 25 C
Ths = 85 C
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
110
100
0.01
0.1
1
10
Ths = 25 C
Ths = 85 C
BU2507AF/X
IC / A
VCEsat / V
IC/IB = 3
IC/IB = 4
IC/IB = 5
September 1997
3
Rev 1.100



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