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GS66508B Folha de dados(PDF) 1 Page - GaN Systems Inc. |
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GS66508B Folha de dados(HTML) 1 Page - GaN Systems Inc. |
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1 / 16 page ![]() GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Rev 200402 © 2009-2020 GaN Systems Inc. 1 Submit datasheet feedback Package Outline Features • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Small 7.0 x 8.4 mm2 PCB footprint • Source Sense (SS) pin for optimized gate drive • RoHS 3 (6+4) compliant Applications • AC-DC Converters • DC-DC Converters • Bridgeless Totem Pole PFC • Inverters • Energy Storage Systems • On Board Battery Chargers • Uninterruptable Power Supplies • Solar Energy • Industrial Motor Drives • Appliances • Laser Drivers • Wireless Power Transfer Description The GS66508B is an enhancement mode GaN-on- silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66508B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Circuit Symbol |
Nº de peça semelhante - GS66508B |
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Descrição semelhante - GS66508B |
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