All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev.

06, 2023-06-28

Thermally-Enhanced High Power RF LDMOS FET

28 W, 28 V, 1800 – 2200 MHz

Description

The PTFC210202FC integrates two independent 10-watt LDMOS FETs and

is designed for use in cellular amplifier applications in the 2110 to 2170

MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS

process, this device provides excellent thermal performance and superior

reliability.

PTFC210202FC

Package H-37248-4

Features

• Input matched

• Typical CW performance, 2170 MHz, 28 V,

combined outputs

- Output power at P1dB = 28 W

- Efficiency = 62%

- Gain = 20.9 dB

• Capable of handling 10:1 VSWR @28 V, 28 W (CW) out-

put power

• Integrated ESD protection : Human Body Model, Class

1C (per JESD22-A114)

• Low thermal resistance

• Pb-free and RoHS compliant

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture)

VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Linear Gain

Gps

20

21

—

dB

Drain Efficiency

hD

26.5

29

—

%

Adjacent Channel Power Ratio

ACPR

—

–31

–28

dBc

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

28

32

36

40

44

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz

3GPP WCDMA signal,

PAR = 7.5 dB, 3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

ptfc210202fc_g1

PTFC210202FC