GTRA214602FC-V1-R2 datasheet(1/8 Pages) WOLFSPEED

Nome de Peças	GTRA214602FC-V1-R2

Descrição Electrónicos	Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

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Fabricante Electrônico	WOLFSPEED [WOLFSPEED, INC.]

Página de início	https://www.wolfspeed.com/

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Rev. 02.1, 2022-1-27

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

GTRA214602FC

Package Types: H-37248C-4

PN: GTRA214602FC

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetric Doherty design

- Main: P3dB = 170 W Typ

- Peak: P3dB = 350 W Typ

• Typical pulsed CW performance: 16 µs pulse width,

10% duty cycle, 2140 MHz, 48 V, Doherty fixture

- Gain = 15 dB @ 49 dBm

- Efficiency = 60% @ 49 dBm

- Output power at P3dB = 490 W

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF GaN on SiC HEMT

490 W, 48 V, 2110 – 2170 MHz

Description

The GTRA214602FC is a 490-watt (P

3dB) GaN on SiC high

electron mobility transistor (HEMT) designed for use in

multi-standard cellular power amplifier applications. It

features input matching, high efficiency, and a thermally-

enhanced package with earless flange.

Target RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

V

DD = 48 V, IDQ = 150 mA, VGS(PEAK) = –5.5 V, POUT = 80 W avg, ƒ = 2170 MHz

3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

13

14.4

—

dB

Drain Efficiency

h

D

56

59

—

%

Adjacent Channel Power Ratio

ACPR

—

–30

–27

dBc

Output PAR @ 0.01% CCDF

OPAR

7.1

8.2

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-80

-60

-40

-20

0

20

40

60

80

0

5

10

15

20

25

30

35

40

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ = 150 mA, ƒ = 2170 MHz,

3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

g214602f c- gr 1a

Nº de peça semelhante - GTRA214602FC-V1-R2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Cree, Inc	GTRA214602FC	321Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT

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Descrição semelhante - GTRA214602FC-V1-R2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Cree, Inc	GTVA220701FA	581Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 ??2170 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA212701FA	434Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTVA220701FA_V1	736Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27
	GTRA262802FC	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27
	GTVA212701FA	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
	GTVA220701FA	736Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27

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GTRA214602FC-V1-R2 Folha de dados(PDF) 1 Page - WOLFSPEED, INC.

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