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APT8020B2LL Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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APT8020B2LL Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor APT8020B2LL FEATURES · Drain Current –ID= 38A@ TC=25℃ · Drain Source Voltage- : VDSS= 800V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 38 A IDM Drain Current-Single Pluse 152 A PD Total Dissipation @TC=25℃ 690 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.18 ℃ /W |
Nº de peça semelhante - APT8020B2LL |
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Descrição semelhante - APT8020B2LL |
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