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C3D08060G Rev. H, 01-2018

Copyright © 2018 Cree, Inc. All rights reserved.

The information in this document is subject to change without notice.

Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

Fax: +1.919.313.5451

www.cree.com/power

•

RoHS Compliance

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the thresh-

old limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC

(RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative

or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.

•

REACh Compliance

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)

has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-

tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is

also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body

nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited

to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical

equipment, aircraft navigation or communication or control systems, or air traffic control systems.

Notes

• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes

• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2

• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i

Related Links

Diode Model

VT

RT

Diode Model CSD10060

Vf T = VT + If*RT

VT= 0.92 + (Tj * -1.35*10-3)

RT= 0.052 + (Tj * 0.29*10-3)

Note: T

j = Diode Junction Temperature In Degrees Celsius

valid from 25°C to 175°C

VfT = VT+If*RT

V

T = 0.95+(TJ* -1.2*10

-3

)

R

T = 0.054+(TJ* 5.5*10

-4

)