BSP255 datasheet(8/10 Pages) PHILIPS

Nome de Peças	BSP255

Descrição Electrónicos	P-channel enhancement mode vertical D-MOS transistor

PDF	10 Pages

Scroll/Zoom	100%

Fabricante Electrônico	PHILIPS [NXP Semiconductors]

Página de início	http://www.nxp.com

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8 / 10 page

1996 Aug 05

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSP255

Fig.12 Temperature coefficient of gate-source

threshold voltage as a function of

junction temperature; typical values.

VGSth at VDS =VGS ; ID = −1 mA.

GSth at Tj

GSth at 25 ° C

--------------------------------------

handbook, halfpage

−75

−25

175

1.4

1.2

0.8

0.6

1.0

MBH438

125

Tj (°C)

Fig.13 Temperature coefficient of drain-source

on-state resistance as a function of

junction temperature; typical values.

(1) VGS = −4.5 V; ID = −80 mA.

(2) VGS = −2.8 V; ID = −50 mA.

DSon at Tj

DSon at 25 ° C

-----------------------------------------

handbook, halfpage

−75

−25

175

2.4

2.0

1.6

(1)

(2)

0.4

1.2

0.8

MBH439

125

Tj (°C)

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