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KMI16/1/V3PX Folha de dados(PDF) 3 Page - NXP Semiconductors

Nome de Peças KMI16/1/V3PX
Descrição Electrónicos  Integrated rotational speed sensor
PDF  12 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

KMI16/1/V3PX Folha de dados(HTML) 3 Page - NXP Semiconductors

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2000 Sep 05
3
Philips Semiconductors
Product specification
Integrated rotational speed sensor
KMI16/1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
CHARACTERISTICS
Tamb =25 °C; VCC = 5 V; d = 1.9 mm; ft = 2 kHz; test circuit see Fig.5; gear wheel: module 2.08 mm; material
9SMnPb28k; see Fig.6; centred sensor position; see notes 1, 2 and 3; unless otherwise specified.
Notes
1. High rotational wheel speeds reduce the maximum sensing distance because of eddy currents, depending on target
wheel dimensions and materials used.
2. Output pins are designed for electrostatic sensitivity for more than 2000 V according to Human Body Model (HBM);
MIL-STD-883; method 3015.
3. EMC behaviour depends greatly on design of application circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
DC operating supply voltage
Tamb = −40 to +150 °C
4.5
16
V
voltage pin 1
Tamb = −40 to +150 °C; no wrong polarity
protection
−0.5
+16
V
Vout
OC output voltage
Tamb = −40 to +150 °C; no wrong polarity
protection; see Fig.5
−0.5
+16
V
Vout(max)
peak OC output voltage
Tamb = −40 to +40 °C; no wrong polarity
protection; see Fig.5
−0.5
+26.5
V
Iout(max)
OC output current
Tamb = −40 to +150 °C
−
20
mA
Iout(off)
OC output leakage current
Tamb = −40 to +150 °C
−
100
µA
Ptot
total power dissipation
Tamb = −40 to +150 °C
−
200
mW
Tsld
soldering temperature
t
≤ 10 s
−
260
°C
Tstg
storage temperature
−65
+150
°C
Tamb
ambient operating temperature
−40
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICC
supply current (pin 1)
Tamb = −40 to +150 °C
4
10
14
mA
Vout (high)
OC output voltage high
OC = off state; Tamb = −40 to +150 °C 4.7
4.9
−
V
VCE sat
OC saturation voltage
OC = on state; Iout =20mA
−
0.4
1
V
tr
output signal rise time
10% to 90%
5
12
20
µs
tf
output signal fall time
10% to 90%
0.1
0.4
10
µs
δ
duty cycle
Tamb = −40 to +150 °C
305070%
dmin
minimum sensing distance
Tamb = −40 to +150 °C
−
0.3
0.5
mm
dmax
maximum sensing distance Tamb = −40 to +150 °C
2.4
2.9
−
mm



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