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BSP030 Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BSP030
Descrição Electrónicos  N-channel enhancement mode vertical D-MOS transistor
PDF  12 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSP030 Folha de dados(HTML) 2 Page - NXP Semiconductors

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1997 Mar 13
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP030
FEATURES
• High speed switching
• No secondary breakdown
• Very low on-state resistance.
APPLICATIONS
• Motor and actuator drivers
• Power management
• Synchronized rectification.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a 4-pin plastic SOT223 SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT223
PIN
SYMBOL
DESCRIPTION
1
g
gate
2
d
drain
3
s
source
4
d
drain
handbook, halfpage
MAM054 - 1
4
123
Top view
s
d
g
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−
30
V
VSD
source-drain diode forward voltage
IS = 1.25 A
−
1V
VGS
gate-source voltage (DC)
−±20
V
VGSth
gate-source threshold voltage
ID = 1 mA; VDS =VGS
1
2.8
V
ID
drain current (DC)
Ts = 100 °C
−
10
A
RDSon
drain-source on-state resistance
ID = 5 A; VGS =10V
−
0.03
Ω
Ptot
total power dissipation
Ts = 100 °C
−
5W



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