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GLT6400L08LL-85ST Folha de dados(PDF) 6 Page - List of Unclassifed Manufacturers

Nome de Peças GLT6400L08LL-85ST
Descrição Electrónicos  Ultra Low Power 512k x 8 CMOS SRAM
PDF  10 Pages
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Fabricante Electrônico  ETC [List of Unclassifed Manufacturers]
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GLT6400L08LL-85ST Folha de dados(HTML) 6 Page - List of Unclassifed Manufacturers

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G -LINK
GLT6400L08
Ultra Low Power 512k x 8 CMOS SRAM
Feb 2001(Rev. 1.1)
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 6 -
Timing Waveform of Read Cycle 1
(3,6,7,9) (Address Controlled)
DOUT
tAA
tOH
tRC
Data Valid
Address
Timing Waveform of Read Cycle 2
(5,6,8,9) ( CE1 Controlled)
tOE
tRC
Data Valid
CE1
tOHZ
tCHZ
tPD
50%
50%
tOLZ
tACE
tCLZ
tPU
Supply Current
OE
DOUT
ICC
ISB
Write Cycle
(3,11)( 70ns Vcc=3V to 3.6V , 85ns Vcc=2.7V to 3.3V )
70
85
Parameter
Symbol
Min
Max
Min
Max
Unit Note
Write Cycle Time
tWC
70
85
ns
Chip Enable to Write End
tCW
60
70
ns
Address Setup to Write End
tAW
60
70
ns
Address Setup Time
tAS
0
0
ns
Write Pulse Width
tWP
50
60
ns
Write Recovering Time
tWR
0
0
ns
Data Valid to Write End
tDW
30
35
ns
Data Hold Time
tDH
0
0
ns
Write Enable to Output in High-Z
tWZ
25
35
ns
4,5
Output Active from Write End
tOW
5
5
ns
4,5



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