BFR93. datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Oct 29

Philips Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR93

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

2. Die mounted in a SOT37 package (BFR91).

3. IC = 30 mA; VCE = 5 V; RL =75 Ω; VSWR < 2; Tamb =25 °C;

Vp =VO = 300 mV at fp = 495.25 MHz;

Vq =VO −6 dB at fq = 503.25 MHz;

Vr =VO −6 dB at fr = 505.25 MHz;

measured at fp +fq − fr = 493.25 MHz.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1

260

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =10V

−−

hFE

DC current gain

IC = 30 mA; VCE = 5 V

−

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

0.7

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

1.8

−

Cre

feedback capacitance

IC = 2 mA; VCE = 5 V; f = 1 MHz;

Tamb =25 °C

−

0.8

−

transition frequency

IC = 30 mA; VCE = 5 V; f = 500 MHz

−

GHz

GUM

maximum unilateral power gain

(note 1)

IC = 30 mA; VCE = 5 V; f = 500 MHz;

Tamb =25 °C

−

16.5

−

noise ﬁgure (note 2)

IC = 2 mA; VCE = 5 V; f = 500 MHz;

ZS = opt.; Tamb =25 °C

−

1.9

−

dim

intermodulation distortion

note 3

−−60

−

10 log

–





–





-------------------------------------------------------------- dB

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