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STTH812G Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STTH812G
Descrição Electrónicos  Ultrafast recovery - 1200 V diode
PDF  11 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH812G Folha de dados(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH812
2/11
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 1.5 x IF(AV) + 0.05 IF
2
(RMS)
Table 1.
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
IF(RMS)
RMS forward current
TO-220AC / D2PAK / TO-220FPAC
30
A
TO-220AC Ins
20
IF(AV)
Average forward current,
δ = 0.5
TO-220AC / D2PAK
Tc = 140° C
8A
TO-220FPAC
Tc = 75° C
TO-220AC Ins
Tc = 115° C
IFRM
Repetitive peak forward current
tp = 5 µs, F = 5 kHz square
100
A
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
80
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature
175
°C
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AC / D2PAK
1.9
°C/W
TO-220FPAC
5.4
TO-220AC Ins
3.1
Table 3.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25° C
VR = VRRM
8
µA
Tj = 125° C
5
50
VF
(2)
Forward voltage drop
Tj = 25° C
IF = 8 A
2.2
V
Tj = 125° C
1.30
2.0
Tj = 150° C
1.25
1.9
1.
Pulse test: tp = 5 ms, δ < 2 %
2.
Pulse test: tp = 380 µs, δ < 2 %



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