BCW61D datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 12

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BCW61 series

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −32 V

−−−20

IE = 0; VCB = −32 V; Tamb = 150 °C

−−−20

µA

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−−20

hFE

DC current gain

IC = −10 µA; VCE = −5V

BCW61B

−−

BCW61C

−−

BCW61D

100

−−

DC current gain

IC = −2 mA; VCE = −5V

BCW61B

180

−

310

BCW61C

250

−

460

BCW61D

380

−

630

DC current gain

IC = −50 mA; VCE = −1V

BCW61B

−−

BCW61C

100

−−

BCW61D

110

−−

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.25 mA

−60

−−250 mV

IC = −50 mA; IB = −1.25 mA

−120 −−550 mV

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.25 mA

−600 −−850 mV

IC = −50 mA; IB = −1.25 mA

−0.68 −−1.05 V

VBE

base-emitter voltage

IC = −2 mA; VCE = −5V

−600 −650 −750 mV

IC = −10 µA; VCE = −5V

−−550 −

IC = −50 mA; VCE = −1V

−−720 −

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

4.5

−

emitter capacitance

IC =ic = 0; VEB = −0.5 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5V;

f = 100 MHz; note 1

100

−−

MHz

noise ﬁgure

IC = −200 µA; VCE = −5V;

RS =2kΩ; f = 1 kHz; B = 200 Hz

−

26dB

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