PDTC113EM datasheet(7/19 Pages) NEXPERIA

Nome de Peças	PDTC113EM

Descrição Electrónicos	PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW

PDF	19 Pages

Scroll/Zoom	100%

Fabricante Electrônico	NEXPERIA [Nexperia B.V. All rights reserved]

Página de início	https://www.nexperia.com/

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7 / 19 page

PDTA113E_SER_5

Product data sheet

Rev. 05 — 2 September 2009

6 of 18

NXP Semiconductors

PDTA113E series

PNP resistor-equipped transistors; R1 = 1 k

Ω, R2 = 1 kΩ

VCE = −5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

VCE = −0.3 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

VCE = −5 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 3.

On-state input voltage as a function of

collector current; typical values

Fig 4.

Off-state input voltage as a function of

collector current; typical values

IC (mA)

−10−1

−102

−10

−1

006aaa115

102

hFE

10−1

(1)

(2)

(3)

006aaa116

IC (mA)

−10

−102

−10−1

−1

VCEsat

(V)

−10−2

(1)

(3)

(2)

006aaa117

IC (mA)

−10−1

−102

−10

−1

−10

VI(on)

(V)

−10−1

(1)

(2)

(3)

IC (mA)

−10−1

−10

−1

006aaa118

−1

−10

VI(off)

(V)

−10−1

(1)

(2)

(3)

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