ADL8112ACCZ-R7 datasheet(23/27 Pages) AD

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Data Sheet

ADL8112

THEORY OF OPERATION

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Rev. 0 | 23 of 27

The ADL8112 integrates an amplifier with two switching networks

located at the RF input and output. The amplifier, which is internally

AC-coupled on its input and output, uses a gallium arsenide (GaAs)

LNA die. The switching network employs robust silicon-on-insulator

(SOI) technology for fast switching and a short settling time. This

integrated solution has four different signal path modes available:

an internal amplifier, an internal bypass, External Bypass A, and

External Bypass B. Signal path modes are controlled through the

VA and VB digital pins. The internal amplifier is biased up by

applying 8.5 V to VDD1 and by connecting a bias resistor between

VDD1 and the RBIAS pin. The reflective switch network is powered

by applying +3.3 V and −3.3 V to VDD2 and VSS2, respectively. DC

bias to the switches is independent of the LNA. Turning off the bias

to VDD1 that controls the LNA, provides better isolation between

RF ports.

SIGNAL PATH MODES FOR DIGITAL CONTROL

INPUTS

Figure 78. Internal Amplifier Mode, VA = 0 V and VB = 0 V

Figure 79. Internal Bypass Mode, VA = 3.3 V and VB = 3.3 V

Figure 80. External Bypass A Mode, VA = 0 V and VB = 3.3 V

Figure 81. External Bypass B Mode, VA = 3.3 V and VB = 0 V

Table 12. Truth Table

Mode Name

Digital Control

Signal Path Mode

Internal Amplifier

Low

RFIN to RFOUT through the amplifier path

Internal Bypass

High

RFIN to RFOUT through the bypass path

External Bypass A

Low

High

RFIN to OUT_A, IN_A to RFOUT

External Bypass B

High

Low

RFIN to OUT_B, IN_B to RFOUT

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