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STTH30S12W Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STTH30S12W Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Ultrafast Rectifier STTH30S12W FEATURES · 1200V blocking voltage · Ultrafast, soft recovery · Very low conduction and switching losses · High frequency and/or high pulsed current operation · High junction temperature · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · This power rectifier is specifically designed for use as damper diode in horizontal deflection circuits for high and very high resolution monitors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1200 V IF(AV) Average Rectified Forward Current 30 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60Hz) 180 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ |
Nº de peça semelhante - STTH30S12W |
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Descrição semelhante - STTH30S12W |
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