Nexperia

BAS116

Low-leakage diode

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAS116

SOT23

plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9

mm x 1.3 mm x 1 mm body

SOT23

7. Marking

Table 4. Marking codes

Type number

Marking code[1]

BAS116

JV%

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

85

V

VR

reverse voltage

Tj = 25 °C

-

75

V

IF

forward current

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-

215

mA

tp = 1 µs; square wave; Tj(init) = 25 °C

-

4

A

tp = 1 ms; square wave; Tj(init) = 25 °C

-

1

A

IFSM

non-repetitive peak

forward current

tp = 1 s; square wave; Tj(init) = 25 °C

-

0.5

A

IFRM

repetitive peak forward

current

-

500

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

250

mW

Per device, one diode loaded

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

BAS116

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© Nexperia B.V. 2020. All rights reserved

Product data sheet

5 August 2020

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