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MDP9N60TH Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças MDP9N60TH
Descrição Electrónicos  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MDP9N60TH Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
MDP9N60TH
FEATURES
·
Drain Current : ID= 9A@ TC=25℃
·
Drain Source Voltage
: VDSS= 600V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.75Ω(Max) @VGS= 10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
9
A
IDM
Drain Current-Single Pluse
36
A
PD
Total Dissipation @TC=25℃
150
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.83
℃
/W


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