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ISCND436D Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças ISCND436D
Descrição Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCND436D Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc Silicon NPN Power Transistor
ISCND436D
DESCRIPTION
·
Collector–Emitter Sustaining Voltage
VCEO: 500V(Min)
·
Low Collector Saturation Voltage
: VCE(sat) =1.3V(Max.)@ IC= 2A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
12
A
PC
Total Power Dissipation
@ TC=25℃
1.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.57
℃
/W


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