© Nexperia B.V. 2017. All rights reserved

PTVSXP1UTP_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 11 October 2011

3 of 12

Nexperia

PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

5.

Limiting values

[1]

In accordance with IEC 61643-321 (10/1000

s current waveform).

[1]

Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.

6.

Thermal characteristics

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

[4]

Soldering point of cathode tab.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

PPPM

rated peak pulse power

[1] -600

W

IPPM

rated peak pulse current

[1] -see

Table 9

and 10

IFSM

non-repetitive peak

forward current

single half-sine

wave; tp =8.3 ms

-100

A

Tj

junction temperature

-

185

C

Tamb

ambient temperature

55

+185

C

Tstg

storage temperature

65

+185

C

Table 6.

ESD maximum ratings

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VESD

electrostatic discharge

voltage

IEC 61000-4-2, level 4

(contact discharge)

[1] -30

kV

Table 7.

ESD standards compliance

Standard

Conditions

Per diode

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3B (human body model)

> 8 kV

Table 8.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] --200

K/W

[2] --120

K/W

[3] --60

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

[4] --12

K/W