1.

Product profile

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and

NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted

Device (SMD) plastic package.

1.2 Features

I Low VCEsat (BISS) transistor and resistor-equipped transistor in one package

I Low threshold voltage (< 1 V) compared to MOSFET

I Low drive power required

I Space-saving solution

I Reduction of component count

1.3 Applications

I Supply line switches

I Battery charger switches

I High-side switches for LEDs, drivers and backlights

I Portable equipment

1.4 Quick reference data

[1]

Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

[2]

Pulse test: tp ≤ 300 µs; δ≤ 0.02

PBLS6002D

60 V PNP BISS loadswitch

Rev. 02 — 7 September 2009

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low VCEsat transistor

VCEO

collector-emitter voltage

open base

-

-

−60

V

IC

collector current (DC)

[1] --

−1A

RCEsat

collector-emitter saturation

resistance

IC = −1A;

IB = −100 mA

[2] -

255

340

m

Ω

TR2; NPN resistor-equipped transistor

VCEO

collector-emitter voltage

open base

-

-

50

V

IO

output current (DC)

-

-

100

mA

R1

bias resistor 1 (input)

3.3

4.7

6.1

k

Ω

R2/R1

bias resistor ratio

0.8

1

1.2