Table 6. Absolute maximum ratings

Parameter

Symbol

Min.

Max.

Units

Storage temperature

TS

-55

150

°C

Operating temperature

TA

-40

125

°C

Supply voltage

VDD, VDDISO

-0.3

6

V

Steady-state input

voltage

VIN+, VIN-

-0.3

VDDISO + 0.5

V

Digital input/output

voltages

MDAT+, MDAT-

MCLKIN+, MCLKIN-

-0.3

3.6

V

Lead solder

temperature

260 for 10 s.

°C

Table 7. Recommended Operating Conditions

Parameter

Symbol

Min.

Max.

Units

Ambient operating temperature

TA

-40

125

°C

VDD supply voltage

VDD

3

5.5

V

VDDISO supply voltage

VDDISO

4.5

5.5

V

Analog input voltage

VIN+, VIN-

-200

200

mV

Table 8. Electrical specifications

VDD=3 V to 5.5 V, VDDISO = 4.5 to 5.5 V, VIN+ = -200 mV to +200 mV, TA=-40 to 125 °C, fMCLKIN=5 to 25MHz unless otherwise

noted.

Parameter

Symbol

Min.

Typ.

Max.

Units

Test conditions

STATIC CHARACTERISTICS

Resolution

16

bits

with SINC3 filterwith OSR=256 and

VIN+-VIN-=200 mV

Integral nonlinearity

INL

±3

LSB

Differential nonlinearity

DNL

±0.2

LSB

No missing codes

Offset error

VVOS

-0.8

mV

Offset drift vs. temperature

TCVVOS

1.5

4.5

µV/°C

Offset drift vs. VDDISO

200

µV/V

Gain error

GE

±1.0

%

Gain error drift vs.

Temperature

TCGE

60

ppm/°C

Gain error drift vs. VDDISO

600

µV/V

ANALOG INPUTS

Full-scale differential voltage input

range

FSR

-320

+320

mV

VIN = VIN+ – VIN-

Average input bias current

IINA

–0.5

µA

VDDISO = 5V, VDD = 5V, VIN+ = 0 V;

IINA

40

50

µA

VDDISO = 5 V, VDD = 5 V, VIN+ = 300

mV;

Input capacitance

CINA

10

pF

Across VIN+ or VIN- to GNDISO

ISOSD61

Device specifications

DS13605 - Rev 8

page 6/23