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STM32G0C1NET3X Folha de dados(PDF) 84 Page - STMicroelectronics

Nome de Peças STM32G0C1NET3X
Descrição Electrónicos  Arm® Cortex®-M0 32-bit MCU, up to 512KB Flash, 144KB RAM,6x USART, timers, ADC, DAC, comm. I/Fs, AES, RNG, 1.7-3.6V
PDF  159 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STM32G0C1NET3X Folha de dados(HTML) 84 Page - STMicroelectronics

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Electrical characteristics
STM32G0C1xC/xE
84/159
DS13564 Rev 4
Figure 19. Low-speed external clock source AC timing diagram
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 42. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
MS19215V2
VLSEH
tf(LSE)
90%
10%
TLSE
t
tr(LSE)
VLSEL
tw(LSEH)
tw(LSEL)
Table 42. HSE oscillator characteristics(1)
Symbol
Parameter
Conditions(2)
Min
Typ
Max
Unit
fOSC_IN
Oscillator frequency
-
4
8
48
MHz
RF
Feedback resistor
-
-
200
-
kΩ
IDD(HSE)
HSE current consumption
During startup(3)
--
5.5
mA
VDD = 3 V,
Rm = 30 Ω,
CL = 10 pF@8 MHz
-0.44
-
VDD = 3 V,
Rm = 45 Ω,
CL = 10 pF@8 MHz
-0.45
-
VDD = 3 V,
Rm = 30 Ω,
CL = 5 pF@48 MHz
-0.68
-
VDD = 3 V,
Rm = 30 Ω,
CL = 10 pF@48 MHz
-0.94
-
VDD = 3 V,
Rm = 30 Ω,
CL = 20 pF@48 MHz
-1.77
-
Gm
Maximum critical crystal
transconductance
Startup
-
-
1.5
mA/V
tSU(HSE)(4) Startup time
VDD is stabilized
-
2
-
ms
1. Guaranteed by design.
2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.



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