2SC5192

2

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cutoff Current

ICBO

VCB = 5 V, IE = 0

100

nA

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

100

nA

DC Current Gain

hFE

VCE = 1 V, IC = 3 mANote 1

80

160

Insertion Power Gain (1)

|S21e|2

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

3

4.0

dB

Insertion Power Gain (2)

|S21e|2

VCE = 3 V, IC = 20 mA, f = 2.0 GHz

8

dB

Noise Figure (1)

NF

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

1.7

2.5

dB

Noise Figure (2)

NF

VCE = 3 V, IC = 7 mA, f = 2.0 GHz

1.5

dB

Gain Bandwidth Product (1)

fT

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

4

4.5

GHz

Gain Bandwidth Product (2)

fT

VCE = 3 V, IC = 20 mA, f = 2.0 GHz

9

GHz

Collector Capacitance

Cre

VCB = 1 V, IE = 0, f = 1.0 MHzNote 2

0.65

0.8

pF

Notes 1. Pulse Measurement: PW

≤ 350

µs, Duty cycle ≤ 2 %, Pulsed

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE Classification

Rank

FB

Marking

T88

hFE

80 to 160