2SC4571 datasheet(4/9 Pages) RENESAS

Nome de Peças	2SC4571

Descrição Electrónicos	NPN SILICON RF TRANSISTOR

PDF	9 Pages

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Fabricante Electrônico	RENESAS [Renesas Technology Corp]

Página de início	http://www.renesas.com

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ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 15 V, IE = 0 mA

−

100

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

100

Collector Saturation Voltage

VCE(sat)

hFE = 10, IC = 5 mA

−

0.5

DC Current Gain

hFE

Note 1

VCE = 5 V, IC = 5 mA

100

200

−

RF Characteristics

Gain Bandwidth Product

VCE = 5 V, IC = 5 mA, f = 1.0 GHz

−

5.0

–

GHz

Insertion Power Gain

S21e2 VCE = 5 V, IC = 5 mA, f = 1.0 GHz

5.0

−

Output Capacitance

Cob

Note 2

VCB = 5 V, IE = 0 mA, f = 1.0 MHz

−

0.9

1.2

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

T75

T76

T77

Marking

T75

T76

T77

hFE Value

40 to 80

60 to 120

100 to 200

Data Sheet PU10513EJ01V0DS

2SC4571

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