3DA100 datasheet(1/2 Pages) ISC

Nome de Peças	3DA100

Descrição Electrónicos	isc Silicon NPN Power Transistor

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

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isc Silicon NPN Power Transistor

3DA100

DESCRIPTION

·

High DC Current Gain

: hFE= 10(MAX)@IC= 1.5A

·

Excellent Safe Operating Area

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use as an output device in complementary

audio amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

2

V

IC

Collector Current-Continuous

5.0

A

PC

Collector Power Dissipation@TC=75℃

40

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55-175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.6

℃

/W

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3DA100 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

3DA100 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

Nº de peça semelhante - 3DA100

Descrição semelhante - 3DA100

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