H5TC4G63CFR-RDL datasheet(27/33 Pages) HYNIX

Nome de Peças	H5TC4G63CFR-RDL

Descrição Electrónicos	4Gb DDR3L SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

PDF	33 Pages

Scroll/Zoom	100%

Fabricante Electrônico	HYNIX [Hynix Semiconductor]

Página de início	http://www.skhynix.com/kor/main.do

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27 / 33 page

Rev. 1.4/ Oct. 2015

Standard Speed Bins

DDR3 SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.

DDR3-1066 Speed Bins

For specific Notes see “Speed Bin Table Notes” on page 31.

Speed Bin

DDR3-1066

Unit

Note

CL - nRCD - nRP

7-7-7

Parameter

Symbol

min

max

Internal read command to

first data

tAA

13.125

ACT to internal read or

write delay time

tRCD

13.125

—

PRE command period

tRP

13.125

—

ACT to ACT or REF

command period

tRC

50.625

—

ACT to PRE command

period

tRAS

37.5

9 * tREFI

CL = 5

CWL = 5

tCK(AVG)

3.0

3.3

1, 2, 3, 4, 6,

12,13

CWL = 6

tCK(AVG)

Reserved

CL = 6

CWL = 5

tCK(AVG)

2.5

3.3

1, 2, 3, 6

CWL = 6

tCK(AVG)

Reserved

1, 2, 3, 4

CL = 7

CWL = 5

tCK(AVG)

Reserved

CWL = 6

tCK(AVG)

1.875

< 2.5

1, 2, 3, 4

CL = 8

CWL = 5

tCK(AVG)

Reserved

CWL = 6

tCK(AVG)

1.875

< 2.5

1, 2, 3

Supported CL Settings

5, 6, 7, 8

nCK

Supported CWL Settings

5, 6

nCK

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