1

Characteristics

Table 1. Absolute ratings (limiting values, with terminals 1 and 3 short circuited, at 25 °C, unless

otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

Forward rms current

60

A

IF(AV)

Average forward current δ = 0.5, square wave

Tc = 125 °C

30

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

400

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

1545

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

150

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

1

°C/W

For more information, please refer to the following application note:

•

AN5088: Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (with terminals 1 and 3 short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

45

µA

Tj = 125 °C

-

15

45

mA

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

-

500

mV

Tj = 125 °C

-

420

Tj = 25 °C

IF = 10 A

-

600

670

Tj = 125 °C

-

505

560

Tj = 25 °C

IF = 30 A

-

780

870

Tj = 125 °C

-

630

690

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.580 x IF(AV) + 0.0033 x IF 2 (RMS)

For more information, please refer to the following application notes related to the power losses:

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS30SM100S

Characteristics

DS6167 - Rev 7

page 2/14