PS10170CB datasheet(3/10 Pages) STMICROELECTRONICS

Nome de Peças	PS10170CB

Descrição Electrónicos	High voltage power Schottky rectifier

PDF	10 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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3 / 10 page

DocID12541 Rev 4

3/10

STPS10170C

Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Average forward current per diode

versus ambient temperature (δ = 0.5)

F(AV)(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

IF(AV)(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

100

125

150

175

F(AV)(A)

th(j-a)=15°C/W

δ=tp/T

th(j-a)=Rth(j-c)

Tamb(°C)

Figure 3. Normalized avalanche power derating

versus pulse duration at Tj = 125 °C

Figure 4. Relative variation of thermal

impedance junction to case versus pulse

duration

P(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Figure 5. Reverse leakage current versus

reverse voltage applied (typical values,

per diode)

Figure 6. Junction capacitance versus reverse

voltage applied (typical values, per diode)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

100

125

150

175

R(µA)

j=150°C

j=125°C

j=25°C

j=75°C

j=175°C

VR(V)

100

1000

100

1000

C(pF)

F=1MHz

OSC=30mVRMS

j=25°C

VR(V)

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