Table 10. Cycling performance

Symbol

Parameter

Test condition

Max.

Unit

Ncycle

Write cycle endurance(1)

TA ≤ 25 °C, VCC(min) < VCC < VCC(max)

4,000,000

Write cycle(2)

TA = 85 °C, VCC(min) < VCC < VCC(max)

1,200,000

1. The write cycle endurance is defined for group of four bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an

integer. The write cycle endurance is defined by characterization and qualification.

2. A write cycle is executed when either a page write, a byte write, a write identification page or a lock identification

page instruction is decoded. When using the byte write, the page write or the write identification page, refer also to

Section 5.1.5 ECC (error correction code) and write cycling

Table 11. Memory cell data retention

Parameter

Test condition

Min.

Unit

Data retention(1)

TA = 55 °C

200

Year

1. The data retention behavior is checked in production, while the 200-year limit is defined from characterization and

qualification results.

M24M02-DR M24M02-R

DC and AC parameters

DS7025 - Rev 11

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