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G10M65DF2 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças G10M65DF2
Descrição Electrónicos  Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package
PDF  19 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

G10M65DF2 Folha de dados(HTML) 1 Page - STMicroelectronics

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April 2017
DocID027429 Rev 6
1/19
This is information on a product in full production.
www.st.com
STGB10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A
low-loss in D²PAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
Applications
Motor control
UPS
PFC
General purpose inverter
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packing
STGB10M65DF2
G10M65DF2
D²PAK
Tape and reel
1
3
TAB
D²PAK
2


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