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D44VH10 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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D44VH10 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2022-12-09 2 isc Silicon NPN Power Transistors D44VH10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VEBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 - V VCEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 - V VCBO Collector-Base Breakdown Voltage IC=1mA; IB= 0 100 - V IEBO Emitter Cutoff Current VEB= 7V; IC= 0 - 10 μ A ICEO Collector-Emitter Cutoff Current VCE= 80V;IB= 0 - 1 mA ICBO Collector-Emitter Cutoff Current VCE= 80V;IE= 0 - 100 μ A VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.4 A - 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 0.4 A - 1.2 V hFE-1 DC Current Gain IC= 2A ; VCE= 1V 35 - - hFE-2 DC Current Gain IC= 4A ; VCE= 1V 20 - - · Power and temperature curve |
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