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ZMD30011BAG1-R Folha de dados(PDF) 12 Page - Zentrum Mikroelektronik Dresden AG

Nome de Peças ZMD30011BAG1-R
Descrição Electrónicos  LIN Transceiver
PDF  22 Pages
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Fabricante Electrônico  ZMD [Zentrum Mikroelektronik Dresden AG]
Página de início  http://www.zmdi.com
Logo ZMD - Zentrum Mikroelektronik Dresden AG

ZMD30011BAG1-R Folha de dados(HTML) 12 Page - Zentrum Mikroelektronik Dresden AG

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Copyright © 2006, ZMD AG, Rev. 0.8, 2006-04-12
12/22
All rights reserved. The material contained herein may not be reproduced, adapted, merged, translated, stored, or used without the prior written
consent of the copyright owner. The Information furnished in this publication is preliminary and subject to changes without notice.
ZMD30011
LIN Transceiver
Datasheet
PRELIMINARY
6.2
Electrical Characteristics
VSUP = 6.5...18 V, TJ = -40 ...+150 °C, typical values specified for VSUP = 12 V,
RVSUP-LIN = 500
(if not otherwise defined)
Battery Supply VSUP
Parameter
Symbol
Min
Typ.
Max
Units
Conditions
DC voltage
VSUP
6.5
12
18
V
supply current
in the normal mode,
dominant state
ISDOM
0.7
2.0
3.1
mA
VEN=5V
VTXD=0V
supply current
in the normal mode,
recessive state
ISREC
0.4
1.8
2.2
mA
VEN=5V
VTXD=5V
supply current
in the wait mode
ISWAIT
0.5
1.3
1.8
mA
VEN=0V
VTXD=5V
supply current
in the sleep mode
ISLEEP
4
14
30
A
VEN=0V
VTXD=5V
Mode Control Input Enable EN
Parameter
Symbol
Min
Typ.
Max
Units
Conditions
Low Level input Voltage
VENINL
-0.3
0.8
V
High Level input Voltage
VENINH
2.0
7.0
V
EN input Hysteresis
VENHYS
0.03
0.5
V
VENHYS=VENINH–VENINL
EN Pull-Down resistor
RENPD
280
700
2500
kΩ
VEN=5V
Low Level leakage Current
IENLEAK
-5
0
5
A
VEN=0V
Inhibit Output INH
Parameter
Symbol
Min
Typ.
Max
Units
Remarks
INHIBIT resistance
normal mode
RINH
40
80
IINH=-15mA
VBAT=12V
INHIBIT
Leakage Current
IINHLEAK
-5
5
µA
Sleep mode
VSUP=18V



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