NXP Semiconductors

Data Sheet: Technical Data

3 / 13

A5G35S008N Airfast RF Power GaN Transistor, Rev. 2, November 2022

Table 6. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1) (In NXP Production Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQ = 24 mA, Pout = 29 dBm Avg., f = 3500 MHz,

1−tone CW.

Power Gain

Gps

16.9

18.6

21.0

dB

Drain Efficiency

ηD

17.0

19.0

—

%

Pout @ 6 dB Compression Point

P6dB

38.8

39.7

—

dBm

Wideband Ruggedness (2) (In NXP Reference Circuit, 50 ohm system) IDQ = 24 mA, f = 3500 MHz, Additive White Gaussian Noise (AWGN)

with 10 dB PAR

ISBW of 400 MHz at 55 Vdc, 7.4 W Avg. Modulated Output Power

(13 dB Input Overdrive from 0.005 W Avg. Modulated Output Power)

No Device Degradation

Typical Performance (2) (In NXP Reference Circuit, 50 ohm system) VDD = 48 Vdc, IDQ = 24 mA, 3400–3600 MHz Bandwidth

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

300

—

MHz

Gain Flatness in 200 MHz Bandwidth @ Pout = 27 dBm Avg.

GF

—

0.5

—

dB

Fast CW, 27 ms Sweep

Pout @ 6 dB Compression Point

P6dB

—

10.0

—

W

AM/PM

(Maximum value measured at the P6dB compression point across

the 3400–3600 MHz bandwidth)

Φ

—

–10

—

°

Gain Variation over Temperature

(–40°C to +85°C)

ΔG

—

0.028

—

dB/°C

Output Power Variation over Temperature

(–40°C to +85°C)

ΔP6dB

—

0.005

—

dB/°C

Table 7. Ordering Information

Device

Tape and Reel Information

Package

A5G35S008NT6

T6 Suffix = 5,000 Units, 12 mm Tape Width, 13−inch Reel

DFN 4.5 × 4

1. Part internally input matched.

2. All data measured in reference circuit with device soldered to printed circuit board.

Correct Biasing Sequence for GaN Depletion Mode Transistors

Turning the device ON

1. Set VGS to the pinch−off voltage, typically –5 V.

2. Turn on VDS to nominal supply voltage (+48 V).

3. Increase VGS until IDS current is attained.

4. Apply RF input power to desired level.

Turning the device OFF

1. Turn RF power off.

2. Reduce VGS down to the pinch−off voltage, typically –5 V.

3. Adjust drain voltage VDS to 0 V. Allow adequate time for drain voltage

to reduce to 0 V from external drain capacitors.

4. Turn off VGS.