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DRA821U4...ALM Folha de dados(PDF) 139 Page - Texas Instruments

Nome de Peças DRA821U4...ALM
Descrição Electrónicos  DRA821 Jacinto™ Processors
PDF  252 Pages
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Fabricante Electrônico  TI [Texas Instruments]
Página de início  http://www.ti.com
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DRA821U4...ALM Folha de dados(HTML) 139 Page - Texas Instruments

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VDDA_OSC1
OSC1_XO
t
sX
Time
VSS
VDDA_OSC1 (min.)
VDD_CORE (min.)
VSS
VDD_CORE
J7ES_AUX_OSC_STARTUP_08
Figure 7-30. OSC1 Start-up Time
7.9.4.1.3.1 Load Capacitance
The crystal circuit must be designed such that it applies the appropriate capacitive load to the crystal, as defined
by the crystal manufacturer. The capacitive load, CL, of this circuit is a combination of discrete capacitors CL1,
CL2, and several parasitic contributions. PCB signal traces which connect crystal circuit components to OSC1_XI
and OSC1_XO have parasitic capacitance to ground, CPCBXI and CPCBXO, where the PCB designer should
be able to extract parasitic capacitance for each signal trace. The OSC1 circuits and device package have
combined parasitic capacitance to ground, CPCBXI and CPCBXO, where these parasitic capacitance values are
defined in Table 7-21.
J7ES_AUX_OSC_CC_05
C
PCBXI
C
PCBXO
C
L1
C
L2
PCB
Signal Traces
Crystal Circuit
Components
OSC1_XO
OSC1_XI
C
XI
C
XO
Device
Figure 7-31. Load Capacitance
Load capacitors, CL1 and CL2 in Figure 7-24, should be chosen such that the below equation is satisfied. CL in
the equation is the load specified by the crystal manufacturer.
CL = [(CL1 + CPCBXI + CXI) × (CL2 + CPCBXO + CXO)] / [(CL1 + CPCBXI + CXI) + (CL2 + CPCBXO + CXO)]
To determine the value of CL1 and CL2, multiply the capacitive load value CL by 2. Using this result, subtract the
combined values of CPCBXI + CXI to determine the value of CL1 and the combined values of CPCBXO + CXO to
determine the value of CL2. For example, if CL = 10 pF, CPCBXI = 2 pF, CXI = 1 pF, CPCBXO = 2 pF, CXO = 1 pF, the
value of CL1 = CL2 = [(2CL) - (CPCBXI + CXI)] = [(2CL) - (CPCBXO + CXO)] = [(2 × 10 pF) - 2 pF - 1 pF)] = 17 pF.
7.9.4.1.3.2 Shunt Capacitance
The crystal circuit must also be designed such that it does not exceed the maximum shunt capacitance
for OSC1 operating conditions defined in Table 7-20. Shunt capacitance, Cshunt, of the crystal circuit is a
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DRA821U-Q1
SPRSP57D – APRIL 2020 – REVISED DECEMBER 2022
Copyright © 2022 Texas Instruments Incorporated
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