CMBT5401 datasheet(1/3 Pages) CDIL

Nome de Peças	CMBT5401

Descrição Electrónicos	SILICON P-N-P HIGH-VOLTAGE TRANSISTOR

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Fabricante Electrônico	CDIL [Continental Device India Limited]

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Continental Device India Limited

Data Sheet

Page 1 of 3

SILICON P–N–P HIGH–VOLTAGE TRANSISTOR

P–N–P transistor

Marking

CMBT5401 = 2L

ABSOLUTE MAXIMUM RATINGS

Collector–base voltage (open emitter)

–VCBO

max.

160 V

Collector–emitter voltage (open base)

–VCEO

max.

150 V

Collector current

–I C

max.

500 mA

Total power dissipation up to Tamb = 25°C

Ptot

max

250 mW

Collector–emitter saturation voltage

IC = 50 mA; IB = 5 mA

VCEsat

max.

0,5 V

D.C. current gain

IC = 10 mA; VCE = –5 V

hFE

60 to 240

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

–VCBO

max.

160 V

Collector–emitter voltage (open base)

–VCEO

max.

150 V

Emitter–base voltage (open collector)

–VEBO

max.

5 V

Collector current

–I C

max.

500 mA

CMBT5401

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

3

2

1

SOT-23 Formed SMD Package

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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