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MC33662 Folha de dados(PDF) 8 Page - NXP Semiconductors

Nome de Peças MC33662
Descrição Electrónicos  ISO 17987/LIN 2.x/SAEJ2602-2 LIN Physical Layer
PDF  31 Pages
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Fabricante Electrônico  NXP [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo NXP - NXP Semiconductors

MC33662 Folha de dados(HTML) 8 Page - NXP Semiconductors

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33662
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics
Characteristics under conditions 7.0 V
 VSUP  18 V, -40C  TA  125C, GND = 0 V, unless otherwise noted. Typical
values reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
VSUP PIN (DEVICE POWER SUPPLY)
Nominal Operating Voltage
VSUP
7.0
13.5
18.0
V
Functional Operating Voltage(5)
VSUPOP
6.7
27
V
Load Dump
VSUPLD
40
V
Power-On Reset (POR) Threshold
VSUP Ramp Down and INH goes High to Low
VPOR
3.5
5.3
V
Power-On Reset (POR) Hysteresis
VPORHYST
270
mV
VSUP Undervoltage Threshold (positive and negative)
Transmission disabled and LIN bus goes in recessive state
VUVL, VUVH
5.8
6.7
V
VSUP Undervoltage Hysteresis (VUVL - VUVH)
VUVHYST
130
mV
Supply Current in Sleep Mode
VSUP  13.5 V, Recessive State
13.5 V < VSUP < 27 V
VSUP  13.5 V, Shorted to GND
IS1
IS2
IS3
6.0
24
11
20
70
A
Supply Current in Normal or Slow or Fast Mode
Bus Recessive, Excluding INH Output Current
Bus Dominant, Excluding INH Output Current
IS(REC)
IS(DOM)
4.0
6.0
6.0
8.0
mA
RXD OUTPUT PIN (LOGIC)
Low Level Output Voltage
IIN  1.5 mA
VOL
0
0.9
V
High Level Output Voltage
VEN = 5.0 V, IOUT  250 A
VEN = 3.3 V, IOUT  250 A
VOH
4.25
3.0
5.25
3.5
V
TXD INPUT PIN (LOGIC)
Low Level Input Voltage
VIL
0.8
V
High Level Input Voltage
VIH
2.0
V
Input Threshold Voltage Hysteresis
VINHYST
100
300
600
mV
Pull-up Current Source
VEN = 5.0 V, 1.0 V < VTXD < 3.5 V
IPU
-60
-35
-20
A
EN INPUT PIN (LOGIC)
Low Level Input Voltage
VIL
0.8
V
High Level Input Voltage
VIH
2.0
V
Input Voltage Threshold Hysteresis
VINHYST
100
400
600
mV
Pull-down Resistor
RPD
100
230
350
kohm
5.
For the functional operating voltage, the device is functional and all features are operating. The electrical parameters are noted under
conditions 7.0 V
VSUP 18V, -40oC TA 125o C, GND = 0 V.



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