APM9932CK datasheet(2/13 Pages) ANPEC

2 / 13 page

Rev. B.2 - Apr., 2005

www.anpec.com.tw

APM9932CK

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

N Channel

P Channel

Unit

VDSS

Drain-Source Voltage

-20

VGSS

Gate-Source Voltage

±16

±12

ID*

Continuous Drain Current

-6

IDM*

300

µs Pulsed Drain Current

-20

IS*

Diode Continuous Forward Current

1.5

-1.2

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

PD*

Power Dissipation

TA=100°C

0.8

RθJA*

Thermal Resistance-Junction to Ambient

62.5

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t

≤ 10sec.

APM9932CK

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

VGS=0V, IDS=250

µA

N-Ch

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V, IDS=-250

µA

P-Ch

-20

VDS=16V, VGS=0V

N-Ch

IDSS

Zero Gate Voltage Drain

Current

VDS=-16V, VGS=0V

P-Ch

-1

µA

VDS=VGS, IDS=250

µA

N-Ch

0.55

0.7

1.5

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250

µA

P-Ch

-0.45

-0.6

-1

VGS=±16V, VDS=0V

N-Ch

±100

IGSS

Gate Leakage Current

VGS=±12V, VDS=0V

P-Ch

±100

VGS=4.5V, IDS=9A

N-Ch

VGS=-4.5V, IDS=-6A

P-Ch

VGS=2.5V, IDS=6A

N-Ch

RDS(ON)

Drain-Source On-State

Resistance

VGS=-2.5V, IDS=-4A

P-Ch

Ω

ISD=1.5A, VGS=0V

N-Ch

0.75

1.3

VSD

Diode Forward Voltage

ISD=-1.2A, VGS=0V

P-Ch

-0.8

-1.3

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